Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 9: III-V semiconductors (other than nitrides)
HL 9.5: Talk
Monday, March 12, 2018, 16:00–16:15, EW 202
Phase coherent transport and spin-orbit coupling in GaAs/InSb core/shell nanowires — •Anna Linkenheil1,2, Patrick Zellekens1,2, Torsten Rieger1,2, Nataliya Demarina1,2, Hans Lüth1,2, Mihail Ion Lepsa1,2, Detlev Grützmacher1,2, and Thomas Schäpers1,2 — 1Peter Grünberg Institute, Forschungszentrum Jülich — 2JARA Fundamentals of Future Information Technology (FIT)
InSb nanowires are very interesting for future spin-based devices because of the large g-factor and the strong spin-orbit coupling. Furthermore, InSb has the highest electron mobility of all III/V semiconductors. However, growing bulk InSb nanowires directly was found to be very difficult. In order to tackle this issue we introduced a new concept, where InSb is grown as a shell around a GaAs nanowire core. At room temperature the GaAs/InSb nanowires were conductive, revealing an ambipolar behavior depending on the shell thickness and gate voltage.
We conducted low temperature transport measurements on GaAs/InSb core/shell nanowires. In a perpendicular magnetic field information on phase coherence length and spin-orbit coupling strength was extracted from weak antilocalization and universal conductance fluctuation measurements. In an axially oriented magnetic field Aharonov-Bohm-type conductance oscillations were observed. They are caused by angular momentum states in the InSb shell, representing the radial component of the electron propagation through the nanowire. They are thus directly related to the dimensions of the InSb shell.