Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 9: III-V semiconductors (other than nitrides)
HL 9.6: Talk
Monday, March 12, 2018, 16:30–16:45, EW 202
AlAsSb/GaSb Double Barrier Quantum Well Resonant Tunneling Diodes with Ternary Prewell-Emitters — •Andreas Pfenning1, Georg Knebl1, Robert Weih1, Manuel Meyer1, Andreas Bader1, Monika Emmerling1, Lukas Worschech1, and Sven Höfling1,2 — 1Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — 2SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, United Kingdom
Recently, we proposed and demonstrated for the first-time room temperature resonant tunneling in GaSb-based double barrier quantum well resonant tunneling diodes (RTDs) by electron injection from ternary GaInSb and GaAsSb prewells. In the present study, we investigate the impact of an increasing As concentration in the emitter prewell on the electrical transport characteristics of these resonant tunneling diodes over a broad temperature range. We observe that room temperature resonant tunneling can be boosted up to 2.4 by increasing the As mole fraction up to 11 % and attribute this to an enhanced population of the Γ-valley within the emitter prewell. The incorporation of As in the tunneling structure however degrades the crystal quality as observed by the resonant tunneling characteristic obtained at cryogenic temperatures that leads to enhanced defect scattering at the interfaces and hence lowers the PVCR.