Berlin 2018 – wissenschaftliches Programm
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 12: Multiferroics and magnetoelectrics II (joint session MA/KFM)
KFM 12.2: Vortrag
Mittwoch, 14. März 2018, 09:45–10:00, EB 202
Magnetoelectric memory function with optical readout — Vilmos Kocsis1,2, Karlo Penc2,3, Toomas Rõõm4, Urmas Nagel4, •Jakub Vít2,5, Judit Romhányi6, Yusuke Tokunaga1, Yasujiro Taguchi1, Yoshinori Tokura1, István Kézsmárki2,7, and Sándor Bordács2 — 1RIKEN CEMS, Japan — 2Budapest University of Technology and Economics, Hungary — 3HAS, Hungary — 4NICPB, Estonia — 5Institute of Physics ASCR, Czech Republic — 6OISTGU, Japan — 7EP5, University of Augsburg, Germany
The ultimate goal of multiferroic research is the development of new generation non-volatile memory devices, the so-called magnetoelectric (ME) memories, where magnetic bits are controlled via electric fields without the application of electrical currents, being subject to dissipation. This low-power operation exploits the entanglement of the magnetization and the electric polarization coexisting in multiferroic materials. Here I will demonstrate the optical readout of ME memory states in the antiferromagnetic (AFM) and antiferroelectric (AFE) LiCoPO4, based on the strong absorption difference of THz radiation between its two types of ME domains. [1] This unusual contrast is attributed to the dynamic ME effect of the spin-wave excitations, as confirmed by our microscopic model, which also captures the characteristics of the observed static ME effect. Our proof-of-principle study, demonstrating the control and the optical readout of ME domains in LiCoPO4, lays down the foundation for future ME memory devices based on antiferroelectric-antiferromagnetic insulators.
[1] V. Kocsis et al., arXiv:1711.08124 (2017)