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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 13: Diamond I

KFM 13.5: Hauptvortrag

Mittwoch, 14. März 2018, 11:20–11:50, E 020

CVD diamond for high power electronic devices — •Verena Zürbig — Fraunhofer-Institut für Angewandte Festkörperphysik IAF, Freiburg, Germany

CVD single-crystalline diamond is a promising wide band gap semiconductor for the fabrication of high power, high frequency and high temperature electronic devices due to its outstanding physical properties such as high breakdown electric field, high thermal conductivity and high electron and hole mobilities. Diamond high power devices have been intensively investigated for several years and are a promising alternative to SiC- and GaN-based high power electronic devices. The realization of uni- and bipolar devices requires the ability to grow high quality phosphorous- and boron-doped single-crystalline diamond layers on (100) and (111) oriented crystals along with the ability of 3D-technology to manufacture high power electronic devices. In this talk, a detailed presentation of phosphorous- and boron-doped diamond layer-growths regarding their crystalline quality and its influence on electronic properties will be given. In addition, recently diamond-based power electronic devices will be summarized.