Berlin 2018 – scientific programme
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 19: Materials for Energy Storage II (joint session KFM/CPP)
KFM 19.5: Talk
Wednesday, March 14, 2018, 16:50–17:10, EMH 025
Electromagnetic Functionalization of Wide Band Gap Dielectric Oxides by Interstitial Doping — •Dae-Sung Park1,3, Haiyuan Wang2, Diana Rata3, Akash Bhatnagar1,3, Igor Maznichenko3, Sergey Ostanin3, and Kathrin Dörr3 — 1Zentrum für Innovationskompetenz SiLi-nano, Halle, Germany — 2Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany — 3Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Halle, Germany
In solid-state oxides, methods such as chemical doping/alloying, mechanical strain, defect engineering, and integration of distinct materials, have been conventionally used to modify a wide range of physical and chemical properties. Here, we demonstrate an extraordinary interstitial doping effect centred around a light element (boron) cation. The host matrix is a novel composite system synthesised from discrete bulk LaAlO3:LaBO3 compounds. Our results show a spontaneous ordering of the interstitial boron cations within the host LaAlO3 lattices, and subsequent effective spin-polarized charge injection into the neighbouring cations. These ordered interstitials lead to a series of remarkable functional properties, namely, cation-dominated electrical switching and ferromagnetism. Therefore, interstitial boron doping serves to transform a wide band gap and non-magnetic dielectric bulk oxide into a high-temperature ferromagnetic ionic-electronic conductor. This interstitial doping effect is proposed to be a general route for tailoring new multifunctional properties in bulk oxides for smart materials applications such as non-volatile information and spintronic devices.