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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 2: Ferroelectric Domain Walls I (joint session KFM/TT)

KFM 2.9: Vortrag

Montag, 12. März 2018, 12:15–12:30, EMH 225

Electrical half-wave rectification at improper ferroelectric domain walls — •J. Schaab¹, S. H. Skjaervo², S. Krohns³, X. Dai¹, M. Holtz⁴, M. Lilienblum¹, D. A. Muller^4,5, M. Fiebig¹, S. M. Selbach², and D. Meier^1,2 — ¹ETH Zürich — ²NTNU Trondheim — ³University of Augsburg — ⁴Cornell University — ⁵Kavli Institute at Cornell for Nanoscale Science

Ferroelectric domain walls represent multifunctional 2D-elements that offer great potential for novel device paradigms. Improper ferroelectrics display particularly promising domain walls, which due to their unique robustness, are the ideal template for imposing the desired electronic behavior. Chemical doping, for instance, induces p- or n-type characteristics and electric fields reversibly switch between resistive and conductive domain-wall states.

Here, we demonstrate conversion of alternating current (AC) into direct current (DC) output based on neutral 180^∘ domain walls in improper ferroelectric ErMnO₃. By combining scanning probe and dielectric spectroscopy, we show that the AC-to-DC conversion occurs for frequencies at which the domain walls are pegged to their equilibrium position. The practical frequency regime and magnitude of the output is controlled by the conductivity of the surrounding domains. Using density functional theory, we attribute the distinct transport behavior to oxygen defects that accumulate at the neutral walls. Our study reveals domain walls acting as 2D half-wave rectifiers, extending domain-wall-based nanoelectronics applications into the realm of AC-technology.