Berlin 2018 – wissenschaftliches Programm
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 6: Ferroelectric Domain Walls II (joint session KFM/TT)
KFM 6.10: Vortrag
Montag, 12. März 2018, 18:15–18:30, EMH 225
Domain wall and bulk conductance in ErMn1−xTixO3 — •Theodor Secanell Holstad1, Donald Malcolm Evans1, Alexander Ruff2, Didrik René Småbråten1, Jakob Schaab3, Christian Tzschaschel3, Zewu Yan4,5, Edith Bourret5, Sverre Magnus Selbach1, Stephan Krohns2, and Dennis Meier1 — 1Department of Materials Science and Engineering, NTNU, Norway. — 2Center for Electronic Correlations and Magnetism, University of Augsburg, Germany. — 3Department of Materials, ETH, Switzerland. — 4Department of Physics, ETH, Switzerland. — 5Materials Sciences Division, UC Berkeley, USA.
Ferroelectric domain walls are attracting broad attention as a novel type of spatially mobile oxide interface that can be written, erased, and moved on demand. Recently, acceptor and donor doping was adapted to optimize the behavior at ferroelectric domain walls.
In this talk, I will discuss the effect of donor doping on the electronic bulk and domain wall properties in hexagonal ErMn1−xTixO3. Density functional theory calculations show that Ti4+ goes to the B-site, replacing Mn3+. Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macro- and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality.