Berlin 2018 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 21: Poster I
MA 21.106: Poster
Dienstag, 13. März 2018, 09:30–13:00, Poster A
Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As — Ye Yuan1,2, Chi Xu1,2, René Hübner1, Rafal Jakiela3, Roman Böttger1, Manfred Helm1,2, Maciej Sawicki3, Tomasz Dietl3,4,5, and •Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2Technische Universität Dresden, Dresden, Germany — 3Institute of Physics, Warsaw, Poland — 4International Research Centre MagTop, Warsaw, Poland — 5WPI-Advanced Institute for Materials Research, Sendai, Japan
Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs):GaMnAs and InMnAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strength of p-d coupling. On the insulating side of the transition, ferromagnetic signatures persist to higher temperatures in InMnAs compared to GaMnAs with the same Mn concentration x. This substantiates theoretical suggestions that stronger p-d coupling results in an enhanced contribution to localization, which reduces hole-mediated ferromagnetism.