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MA: Fachverband Magnetismus

MA 21: Poster I

MA 21.106: Poster

Dienstag, 13. März 2018, 09:30–13:00, Poster A

Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As — Ye Yuan^1,2, Chi Xu^1,2, René Hübner¹, Rafal Jakiela³, Roman Böttger¹, Manfred Helm^1,2, Maciej Sawicki³, Tomasz Dietl^3,4,5, and •Shengqiang Zhou¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — ²Technische Universität Dresden, Dresden, Germany — ³Institute of Physics, Warsaw, Poland — ⁴International Research Centre MagTop, Warsaw, Poland — ⁵WPI-Advanced Institute for Materials Research, Sendai, Japan

Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs):GaMnAs and InMnAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strength of p-d coupling. On the insulating side of the transition, ferromagnetic signatures persist to higher temperatures in InMnAs compared to GaMnAs with the same Mn concentration x. This substantiates theoretical suggestions that stronger p-d coupling results in an enhanced contribution to localization, which reduces hole-mediated ferromagnetism.