Berlin 2018 – scientific programme
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MA: Fachverband Magnetismus
MA 34: Spintronics (joint session MA/TT)
MA 34.3: Talk
Wednesday, March 14, 2018, 15:30–15:45, EB 202
Granularity Effects in Antiferromagnetic Spintronics Devices — •Tobias Kosub1, Patrick Appel2, Brendan Shields2, Patrick Maletinsky2, René Hübner1, Jürgen Lindner1, Jürgen Fassbender1, and Denys Makarov1 — 1Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden, Germany — 2University of Basel, Basel, Switzerland
Antiferromagnetic thin film systems have recently become an important focus in spintronics as all-electrical writing and reading mechanisms were discovered [1-3]. The early device prototypes have clearly shown that the extrinsic effects of film strain, granularity and non-zero magnetization are decisive factors in actual performance. Such thin film effects do not merely bring about small alterations to the expected behavior, but can indeed make or break functionality.
In this context, we demonstrate two new complementary methods to study the impact of granularity on the magnetism of antiferromagnetic thin films. We show extremely sensitive Zero-Offset Hall measurements of the non-zero magnetization as well as Nitrogen Vacancy Magnetic Microscopy of the domain patterns for Cr2O3 thin films.
We can track the magnetic ordering in both real and statistical space and we derive important quantities such as pinning and the intergranular exchange.
[1] T. Kosub et al., Nature Commun. 8, 13985 (2017).
[2] T. Kosub et al., Phys. Rev. Lett. 115, 097201 (2015).
[3] P. Wadley et al., Science 351, 587 (2016).