Berlin 2018 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 42: Thin films – anisotropy
MA 42.5: Vortrag
Donnerstag, 15. März 2018, 10:30–10:45, EB 301
Electric field controlled domain wall dynamics and magnetic easy axis switching in liquid gated CoFeB/MgO films — Yuting Liu1, Shimpei Ono2, Guillaume Agnus1, Samridh Jaiswal3, Juergen Langer3, Berthold Ocker3, Dafiné Ravelosona1, and •Liza Herrera Diez1 — 1Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N-Orsay, 91405 Orsay cedex, France. — 2Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511, Japan. — 3Singulus Technology AG, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany.
We present reversible electric (E) field driven switching of the magnetic easy axis in CoFeB/MgO/HfO2 heterostructures from perpendicular to in-plane using an ionic liquid (IL) gate. The modification of magnetic anisotropy reaches 0.108 mJ/m2 in a gate voltage range between -3 V and +3.5 V with an efficiency of 82 fJ (V m)−1. The influence of the E-field induced anisotropy changes on domain nucleation and propagation of magnetic domain walls has also been studied in the perpendicular anisotropy state. A significant modulation of the domain wall velocity is observed both in the creep and depinning regimes of domain wall motion consistent with the E-field induced anisotropy variation. In addition, we demonstrate voltage controlled magnetization switching under a constant magnetic field and voltage control of domain wall pinning.