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MA: Fachverband Magnetismus

MA 44: Topological Insulators II (joint session TT/MA)

MA 44.12: Vortrag

Donnerstag, 15. März 2018, 12:30–12:45, A 053

Controlling the Topological Properties of Stanene by Substrate Engineering: Realistic Modelling and Experimental Approaches — •Philipp Eck¹, Maximilian Bauernfeind², Marius Will², Domenico Di Sante¹, Lenart Dudy², Ronny Thomale¹, Jörg Schäfer², Ralph Claessen², and Giorgio Sangiovanni¹ — ¹Institut für Theoretische Physik und Astrophysik, Universität Würzburg, D-97074 Würzburg — ²Physikalisches Institut and Röntgen Research Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg

Although two-dimensional (2D) group IV (C-, Si-, Ge-, Sn-) honeycomb lattices have been successfully grown on a vast number of substrates, strain, deformation and/or hybridization often destroy their topological properties. Focusing on stanene, a promising strategy is the growth on passivated SiC(0001) with a buffer layer saturating the SiC dangling bonds. We present a systematic density functional theory study of group III and V buffer layers and shed light on the buffer-stanene hybridization physics influencing the vertical stanene distance and the stanene deformation. We find for some buffer layers large equilibrium distances leading to a freestanding-stanene-like topological band structure. The theoretical study will be supported by experimental data on an Al buffer layer.