Berlin 2018 – scientific programme

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MA: Fachverband Magnetismus

MA 52: Poster II

MA 52.53: Poster

Thursday, March 15, 2018, 15:00–18:00, Poster C

Anti-site disorder induced diluted magnetism in semiconducting CoFeTiAl alloy — •tingting lin — Institute of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany

The ordered CoFeTiAl Heusler compound shows a semiconducting character and has been synthesized. However, the detailed electronic structure and the effect of anti-site disorder, which prevails in such type of materials, are unclear. We investigated the effect of anti-site disorder on the electronic structure using the KKR-CPA method, and found that the Co-Ti and Fe-Ti anti-site disordering can induce diluted magnetism in CoFeTiAl alloy. For instance, the Fe-Ti anti-site disorder can induce a 100% spin polarization at the Fermi level within a specific range of disorder parameters. The Co-Fe anti-site disorder occurs more easily judging by the total energies, but has little effect on the semiconductor behavior in the electronic structure and magnetic properties. Detailed analysis reveals that the magnetism can be attributed to the contributions of Co, Fe, and Ti atoms on the anti-site disordered sites, i.e., the diluted magnetism in CoFeTiAl alloy is induced by the anti-site disorder rather than by introducing magnetic dopant elements. This makes the system interesting for future spintronic applications.