Berlin 2018 – scientific programme

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MA: Fachverband Magnetismus

MA 52: Poster II

MA 52.58: Poster

Thursday, March 15, 2018, 15:00–18:00, Poster C

Inelastic electron tunneling spectroscopy at tunnel junctions with integrated topological material — •Denis Dyck¹, Robin-Pierre Klett¹, Andreas Becker¹, Jan Haskenhoff¹, Jan Krieft¹, Karsten Rott¹, Torsten Hübner¹, Gregor Mussler², Jan-Michael Schmalhorst¹, Andreas Hütten¹, and Günter Reiss¹ — ¹Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Bielefeld, Germany — ²Forschungszentrum Jülich, Peter-Grünberg Institut, Jülich, Germany

The research on topological insulators is evolving rapidly. Within less than a decade, experimental effort led from fundamental material analysis to first real topological devices exploiting physics for future spintronic applications. However, all data were taken at planar devices. For technical integration into applicable information architecture, devices based on vertical transport are required to achieve, e.g., scalability and low power consumption. Here, the successful patterning and integration of tunnel junctions based on topological back electrodes are a necessary way to go. Furthermore, different classes of topological matter are investigated: topological crystalline insulators, represented by SnTe thin films, BiSbTe as a topological insulator and Co2TiSi as a magnetic Weyl semimetal. In this work we report on the realization of such tunnel junctions consisting of aforementioned materials and their characterization using inelastic electron tunneling spectroscopy (IETS). Different excitations for different topological materials can be identified.