Berlin 2018 – scientific programme
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MA: Fachverband Magnetismus
MA 54: Spin-dependent transport phenomena
MA 54.4: Talk
Friday, March 16, 2018, 08:45–09:00, EB 301
Anomalous Hall Effect in Cr2O3/Metal Thin Film Systems — •Asser Elsayed, Tobias Kosub, Jürgen Lindner, Jürgen Fassbender, and Denys Makarov — Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden, Germany
Antiferromagnetic thin films have recently shown their promise for applications, such as memory devices [1, 2]. One of these emerging concepts is the AF-MERAM, i.e. antiferromagnetic RAM that uses magnetoelectric materials such as Cr2O3.
An important aspect of memory devices is a strong readout signal. In an AF-MERAM the readout is done through a metal layer that is in contact with the boundary magnetization of Cr2O3 [3]. While reliable [1], the signal obtained in this way is quite weak. In order to increase the readout signal, we explore different metal layers in the Al2O3/Cr2O3/Metal stack, e.g. Pt, Ta and Pd, which have differently strong spin Hall and magnetic proximity effects.
[1] T. Kosub et al., Nature Commun. 8, 13985 (2017).
[2] T. Jungwirth et al., Nature Nanotech. 11.3, 231-241 (2016)
[3] T. Kosub et al., Phys. Rev. Lett. 115, 097201 (2015).