Berlin 2018 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 56: Spin-Hall effects
MA 56.5: Vortrag
Freitag, 16. März 2018, 10:30–10:45, H 0112
Spin Hall magnetoresistance in antiferromagnetic NiO — Johanna Fischer1, Olena Gomomay2, Richard Schlitz3, Kathrin Ganzhorn1, Nynke Vlietstra1, Matthias Althammer1, Hans Huebl1, •Matthias Opel1, Rudolf Gross1, Sebastian T.B. Goennenwein3, and Stephan Geprägs1 — 1Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Garching, Germany — 2Institut für Physik, Johannes Gutenberg Universität Mainz, Germany — 3Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Germany
We investigate the spin Hall magnetoresistance (SMR) effect in thin film bilayer heterostructures of the paramagnetic metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on collinear ferrimagnets [1], this modulation is phase shifted by 90∘ and its amplitude strongly increases with the magnitude of the magnetic field [2]. We explain the observed magnetic field-dependence of the spin Hall magnetoresistance in a comprehensive model taking into account magnetic field induced modifications of the domain structure in antiferromagnets [2]. With this generic model we are further able to estimate the strength of the magnetoelastic coupling [2]. — This work is supported by the DFG via SPP 1538.
[1] M. Althammer et al., Phys. Rev. B 87, 224401 (2013).
[2] J. Fischer et al., submitted to Phys. Rev. B, arXiv:1709.04158.