Berlin 2018 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 27: Poster Session I
MM 27.34: Poster
Dienstag, 13. März 2018, 18:30–19:45, Poster E
Mechanical Control of Atomic-Scale Transistors — •Florian Wertz1, Torben Staiger1,2, Fangqing Xie1, Marcel Heinze1, Philipp Schmieder1, Christian Lutzweiler1, and Thomas Schimmel1,2 — 1Institute of Applied Physics, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany — 2Institute of Nanotechnology, Karlsruhe Institute of Technology, 76344 Eggenstein- Leopoldshafen, Germany
The atomic-scale transistors are devices that allow to open and close an electrical circuit by the controlled and reversible repositioning of just one or a few metal atoms. By means of a small electrochemical voltage in the millivolt range applied to a gate electrode, a few silver atoms are reversibly moved in and out of an atomic-scale junction, in this way reversibly closing and opening an electrical quantum point contact (QPC). The atomic-scale transistor is realized in an electrochemical cell at room temperature.
In the experiments presented here we integrated a three-point bending configuration within the cell to combine the electrochemical control (EC) with a mechanically controllable break junction (MCBJ) technique. With this EC-MCBJ technique we can perform mechanically controllable bistable quantum conductance switching of an atomic-scale transistor in an electrochemical environment. The device can be controlled both mechanically and electrochemically, and the operating modes can be combined, which expands the possibilities for controlling QPCs. Both operating modes of the QPC allow control with atomic-scale precision.