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MM: Fachverband Metall- und Materialphysik
MM 27: Poster Session I
MM 27.6: Poster
Dienstag, 13. März 2018, 18:30–19:45, Poster E
Towards 2D Topological Insulator Devices — •Katharina Polyudov1, Kristina Vaklinova1, Marko Burghard1, and Klaus Kern1,2 — 1Max-Planck-Institute for Solid State Research, Stuttgart, Germany — 2École Polytechnique Fédérale de Lausanne, Switzerland
Spintronics requires the efficient generation, manipulation and detection of spin currents. Graphene has been demonstrated to be a high performance spin transport material, however due to its low spin orbit coupling (SOC), generation and control of the spin polarization by electrical means is difficult. Promising spin generators are the topological insulators (TIs), whose helical surface or edge states feature spin-momentum locking. One intriguing strategy is to locally decorate graphene by a 3D TI in order to create spin generator regions that could be smoothly integrated with laterally adjacent, bare graphene regions as spin transport channels. Along these lines, it is relevant that theory predicts that the interface-induced spin-orbit coupling (SOC) imparted by the 3D TI is able to increase the band gap of the 2D TI graphene. Here, we report the gate-dependent, low temperature charge transport properties of vertical heterostructures composed of graphene and a thin layer of Bi2Te2Se as 3D TI. By using different contact configurations, we explore the extent to which the presence of the Bi2Te2Se top layer modulates the magnetotransport properties of graphene, and furthermore whether signatures of charge transport through helical 1D edge channels within the graphene can be detected.