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MM: Fachverband Metall- und Materialphysik

MM 63: Transport (Diffusion, conductivity, heat)

MM 63.1: Vortrag

Donnerstag, 15. März 2018, 15:45–16:00, TC 010

Atomic transport in Si/Al interfaces — •Kevin-Patrick Treder, Efi Hadjixenophontos, Sebastian Eich, and Guido Schmitz — Institut für Materialwissenschaft, Lehrstuhl für Materialphysik, Stuttgart, Deutschland

The crystallization temperature for semiconductors such as Si and Ge can be drastically lowered when in contact with a metal. Metal induced crystallization (MIC) or the layer-exchange processes were tried to be understood by different thermodynamic or kinetic approaches in the recent years. The direct comparison of the reactions of amorphous or crystalline Si with Al inside a single sample may provide further insight into the mechanisms. In a new experimental approach, we produce artificial nano-sized triple junctions at which the Al/c-Si, the Al/a-Si and the c-Si/a-Si interfaces merge. Samples are prepared via RF-Sputtering, followed by ex-situ annealing in Ar-atmosphere and subsequent post processing via FIB-lift-outs. Full cross-section characterization and analysis was provided by HRTEM and local EDX-analysis. Clear evidence is provided for ~ 2 nm temperature-independent amorphous interlayer formed at the c-Si/Al interface. The diffusion phenomena across and along the related interfaces are demonstrated and measured in direct comparison.