Berlin 2018 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 33: Semiconductor substrates: Structure, epitaxy and growth
O 33.4: Vortrag
Dienstag, 13. März 2018, 14:45–15:00, MA 005
Delta-doped phosphorus layers in silicon — •Ann-Julie Utne Holt1, Sanjoy Mahatha1, Raluca-Maria Stan1, Frode Sneve Strand2, Thomas Nyborg2, Alex Schenk2, Simon Phillip Cooil3, Marco Bianchi1, Philip Hofmann1, Justin Wells2, and Jill Miwa1 — 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), University of Aarhus, 8000 Aarhus C, Denmark — 2Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway — 3Institute of Mathematics and Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK
A δ-layer is a buried, high-density, doping profile in a semiconductor host. Such a doping profile may give rise to the formation of a two-dimensional electron gas (2DEG) in the dopant layer [1]. Phosphorus δ-layers in silicon combined with scanning tunneling microscope lithography have led to the fabrication of functional atomic scale devices [2]. By creating such δ-layers, varying in thickness from an atomically sharp doping profile to a 4.0 nm thick dopant layer, the effect of quantum confinement on the electronic structure of a induced 2DEG was studied using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally undiscovered, quantum well states known as the Δ -manifold was revealed, validating density functional theory calculations developed for describing these δ-layer systems. Verification of these states contributes to the development of accurate models describing the electronic behavior of δ-layer derived devices.