Berlin 2018 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 36: 2D materials beyond graphene: TMDCs, silicene and relatives I
O 36.6: Vortrag
Dienstag, 13. März 2018, 15:15–15:30, MA 043
Investigation of hexagonal boron-nitride (hBN) and graphene Gr-R0∘ on SiC(0001) — •Markus Franke1,2, Shayan Parhizkar1,2, Serguei Soubatch1,2, You-Ron Lin1,2, Nafiseh Samiseresht1,2, Miriam Raths1,2, Janina Felter1,2, François C. Bocquet1,2, and Christian Kumpf1,2 — 1Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany — 2Jülich Aachen Research Alliance (JARA) - Fundamentals of Future Information Technology, 52425 Jülich, Germany
Among other 2D materials, hexagonal boron-nitride (hBN) seems to be a promising candidate for a new substrate material to achieve truly free-standing graphene layers. It forms a flat hexagonal lattice structure with a lattice parameter similar to that of graphene, but (in contrast to graphene) it is insulating (band gap > 5 eV). Here we report on the formation of hBN/SiC(0001) and on the subsequent preparation of graphene layers having the same orientation as the underlying SiC substrate (Gr-R0∘). This orientation is unusual, typically epitaxial graphene on SiC(0001) is rotated by 30∘ (Gr-R30∘).
We discuss the preparation of the layers performed by annealing SiC wafers in a borazine (B3N3H6) atmosphere, and their properties based on results from core-level and angular resolved valence level electron spectroscopy (XPS and ARPES), as well as X-ray standing waves (XSW).