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O: Fachverband Oberflächenphysik

O 42: Poster: Organic-Inorganic Hybrid Systems and Organic Films

O 42.19: Poster

Dienstag, 13. März 2018, 18:15–20:30, Poster A

Multiscale Modeling of ion-sensitive sensor devices — •Jörg Buchwald, Leonardo Medrano Sandonas, Arezoo Dianat, Rafael Gutiérrez, and Gianaurelio Cuniberti — Institute for Materials Science and Max Bergmann Center of Biomaterials Dresden University of Technology, 01069 Dresden, Germany

For the purpose of ion-sensing we want to apply the concept of a reservoir computer. Main part of this device will constitute a network of sensors, that are in contact with the ionic solution (reservoir). To understand the properties of the reservoir computer, knowledge about individual IV characteristics of each sensor is needed. A good candidate for such a sensor is the ion-sensitive field effect transistor (ISFETs). The ISFET can be considered as a FET in which the gate is in contact with an ionic solution and covered by a self-assambled monolayer of biomolecules that are able to bind to specific kinds of ions. The number of bound ions determines the gate potential and the current of the FET. It is assumed to be a function of ion concentration and controlled by binding kinetics.

A good candidate for SAM molecules constitutes the neuropeptide oxytocin, which is able to bind to different types of divalent metal ions. We will employ Molecular Dynamics as well as DFT calculations to scrutinize conformal changes and kinetic stability upon ion binding. From these information we are able to develop a sensor model in which the conformal changes determine the maximum response of the FET gate.