Berlin 2018 – scientific programme
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O: Fachverband Oberflächenphysik
O 42: Poster: Organic-Inorganic Hybrid Systems and Organic Films
O 42.22: Poster
Tuesday, March 13, 2018, 18:15–20:30, Poster A
III/V-on-Si(100) heterointerfaces and single-domain virtual substrates — •Oliver Supplie1, Benjamin Borkenhagen2, Oleksandr Romanyuk3, Toma Susi4, Matthias M. May5, Sebastian Brückner1, Agnieszka Paszuk1, Andreas Nägelein1, Peter Kleinschmidt1, Michael Rienäcker2, Gerhard Lilienkamp2, Winfried Daum2, and Thomas Hannappel1 — 1Institute of Physics, TU Ilmenau, Germany — 2Institute of Energy Research and Physical Technologies, TU Clausthal, Germany — 3Institute of Physics, ASCR Prague, Czech Republic — 4Faculty of Physics, University of Vienna, Austria — 5Chemistry Department, Cambridge University, UK
Pseudomorphic virtual GaP/Si substrates are attractive for III/V-on-Si integration. Adequate preparation of the GaP/Si(100) heterointerface is of particular interest since its atomic and electronic structure highly impacts crystal quality. Here, we present experimental results regarding the formation of the GaP/Si(100) heterointerface from optical in situ studies during metalorganic vapor phase epitaxy and in system photoelectron spectroscopy. These are discussed with respect to recent results from density functional theory [PRB 94:155309 (2016); PRL 118:237403 (2017)]. Specific changes in the MOVPE process routes enable modifications of the atomic structure at the heterointerface. In particular, we study the influence of As and Ga. We correlate these experiments to reference experiments, where Si surfaces are exposed to Ga and P in UHV and the impact on the surface structure is studied in situ with low energy electron microscopy (LEEM).