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O: Fachverband Oberflächenphysik
O 43: Poster: Semiconductor Substrates - Adsorption
O 43.4: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster A
Hexacene generated by deoxygenation on passivated silicon — •Frank Eisenhut1, Justus Krüger1, Dmitry Skidin1, Seddigheh Nikipar1, José M. Alonso2, Enrique Guitián2, Dolores Pérez2, Dmitry A. Ryndyk1,3, Diego Peña2, Gianaurelio Cuniberti1, and Francesca Moresco1 — 1Institute for Materials Science, Max Bergmann Center of Biomaterials, and Center for Advancing Electronics Dresden, TU Dresden, 01069 Dresden, Germany — 2Centro de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS) and Departamento de Química Orgánica, Universidade de Santiago de Compostela, 15782-Santiago de Compostela, Spain — 3Bremen Center for Computational Materials Science (BCCMS), Universität Bremen, 28359 Bremen, Germany
On-surface synthesis represents a successful strategy to form designed molecular structures on an ultra-clean metal substrate. On non-metallic substrates, on the other hand, on-surface synthesis would allow the electrical decoupling of the resulting molecule from the surface, making possible the application of this powerful synthesis approach to electronics and spintronics. Here, we demonstrate that the on-surface generation of hexacene by surface-assisted reduction, already observed on Au(111), can be performed on the H-passivated Si(001) surface. The reaction, observed by scanning tunneling microscopy, is probably driven by the formation of Si-O complexes on the dangling bond defects. Supported by DFT calculations, we investigate the interaction of hexacene with the passivated silicon surface, and with single silicon dangling bonds.