Berlin 2018 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 44: Poster: Oxide and Insulator surfaces: Structure, Epitaxy, Growth and Adsorption
O 44.2: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster A
Temperature dependent spin polarization in EuO thin films investigated by high resolution ARPES — •Tristan Heider1,2, Timm Gerber1, Patrick Lömker1, Claus Michael Schneider1,2, Lukasz Plucinski1,2, and Martina Müller1,3 — 1Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany — 2Fakultät für Physik, Universität Duisburg-Essen, 47048 Duisburg, Germany — 3Experimentelle Physik I, TU Dortmund, 44227 Dortmund, Germany
The ferromagnetic insulator EuO is predicted to show 100% spin polarization at the valence band maximum, which makes this material a prototype candidate for research in the field of spintronics. Our goal is to interface it with a topological insulator to introduce time-reversal symmetry breaking without an external magnetic field.
As a first approach we studied MBE growth of EuO on Cu(001), because Cu is a very good electrical conductor, thus, ideally suited as an aid for charging problems in band mapping from an insulating thin film. After we could narrow down the EuO synthesis to a very small parameter window, in which single-crystalline growth is mastered, we performed temperature dependent high resolution spin-ARPES measurements. A non-vanishing spin polarization of the O 2p band as well as up to 52% in the Eu 4f band could be obtained. Furthermore the temperature dependence of the Eu 4f polarization can be described by the Brillouin function and confirm the literature value of TC = 69 K.