Berlin 2018 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 47: Poster: Graphene - Electronic Properties, Structure, Adsorption, Intercalation and Doping (joint session O/TT)
O 47.1: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster A
The effects of defects and disorder on the electronic structure of graphene — •Piotr Kot1, Jonathan Parnell2, Sina Habibian2, Pavel Ostrovsky1, and Christian Ast1 — 1Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany — 2University of British Columbia, Vancouver, Canada
We use a real-space nearest neighbor tight-binding model to study the effect of defects on the band dispersion of graphene. We find that defects in graphene either generally preserve the canonical band structure, or disrupt it by separating the two cones creating an ``elongated'' Dirac point. This second structure greatly resembles the band dispersion of experimentally measured epitaxial graphene. By using a self-consistent T-matrix approximation we find the reason why defects create two distinctly different band structures, by showing that point defects are either resonant or non-resonant in graphene. Adding all these pieces together, we conclude on the cause of ``elongation'' in epitaxial graphene and the nature of the electronic structure in the ``elongated'' region finding that this region can not be considered a gap.