Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 47: Poster: Graphene - Electronic Properties, Structure, Adsorption, Intercalation and Doping (joint session O/TT)

O 47.13: Poster

Dienstag, 13. März 2018, 18:15–20:30, Poster A

Ru - mediated growth of graphene on SiC for radiation sensing application — •Rajesh Kumar Chellappan, Simon Cooil, Marina Jorge, Håkon Røst, and Justin Wells — Center for Quantum Spintronics, Norwegian University of Science and Technology, Norway

Graphene has been proposed as a suitable candidate for photo/radiation sensors primarily because of its exceptional electronic properties. However, this advantage has been difficult to realize because of the problems associated with the preparation of high quality graphene on dielectric/semiconductor substrates. Therefore, this study focuses on addressing epitaxial ruthenium mediated graphene growth on silicon carbide and the subsequent interface oxidation using soft X-ray photoemission spectroscopy (SXPS). The growth of graphene and formation of ruthenium silicide was investigated by systematic annealing of ruthenium (~1nm) deposited on silicon carbide samples in vacuum at temperatures ranging from 450°C to 700°C. The interlayer oxidation was achieved by exposing the sample at 460°C to oxygen partial pressure of 9.5*10-7 mbar for 1 hour to form a graphene/dielectric/silicon carbide device structure.