Berlin 2018 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 48: Poster: 2D Materials beyond Graphene: TMDCs, Silicene and Relatives
O 48.6: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster A
Controlling the Topological Properties of Stanene: Realistic Modeling and Experimental Approaches for Substrates — •Maximilian Bauernfeind1, Philipp Eck2, Marius Will1, Domenico Di Sante2, Lenart Dudy1, Ronny Thomale2, Jörg Schäfer1, Ralph Claessen1, and Giorgio Sangiovanni2 — 1Physikalisches Institut and Röntgen Research Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg — 2Institut für Theoretische Physik und Astrophysik, Universität Würzburg, D-97074 Würzburg
Stanene, the two-dimensional (2D) honeycomb lattice made of Sn atoms with its non-trivial topological electronic structure could play a revolutionary role in future electronic devices. A bottleneck to reach this ultimate goal is the fabrication of stanene on a substrate, without destroying its topological properties by strain or charge transfer, induced by the bonding situation. To overcome this problem, one approach is to decouple the stanene layer from the substrate. This may, e.g., be achieved by a buffer layer between the substrate and the stanene layer. We present a systematic study of buffer layers made of different group-III and group-V atoms on the wide-bandgap semiconductor SiC(0001). With band structure calculations based on density-functional theory (DFT), we observe a passivation of the SiC(0001) surface. Additionally, the buffer has an influence on the buckling and the vertical distance of the stanene layer. Some buffer layer materials render the stanene layer topological. First experimental data on the fabrication of an Al buffer layer will also be presented.