Berlin 2018 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 48: Poster: 2D Materials beyond Graphene: TMDCs, Silicene and Relatives

O 48.7: Poster

Dienstag, 13. März 2018, 18:15–20:30, Poster A

Hexagonal Boron-Carbon-Nitrogen - a two-dimensional direct band gap semiconductor — •Axel Enders^1,3, Sumit Beniwal^2,3, Suchetana Sarkar¹, Paulo Costa³, Peter Dowben³, James Hooper⁴, Daniel Miller⁵, Eva Zurek⁵, and Shih-Yuan Liu⁶ — ¹Physikalisches Institut, Universität Bayreuth, 95440 Bayreuth — ²Universität Erlangen-Nürnberg, 91058 Erlangen — ³Dept. of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588, USA — ⁴Dept. of Theoretical Chemistry, Jagellionian University, 30-060 Krakow, Poland — ⁵Dept. of Chemistry, Buffalo, New York 14260, USA — ⁶Dept. of Chemistry, Boston College, Chestnut Hill, MA 02467, USA

Two-dimensional h-BCN, synthesized from the precursor molecule bis-BN cyclohexane on the (111) surfaces of Ir and Rh under UHV, was investigated with a comprehensively suite of in-situ local probe microscopy and spectroscopy methods, combined with density functional theory. The lattice structure of h-BCN is identical to that of graphene, with the graphenic sites occupied by atoms of boron, nitrogen and carbon. On the basis of measured band gaps and the computationally predicted electronic band structure, especially a direct electronic band gap that is intermediate to those of the zero-band gap semiconductor graphene and the insulating h-BN, and the theoretical prediction that the band gap is dependent on the molecular tiling, it can be expected that the h-BCN layers are potentially exciting candidates for 2D electronic materials