Berlin 2018 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 51: Poster: Electronic Structure of Surfaces: Spectroscopy, Surface States

O 51.20: Poster

Dienstag, 13. März 2018, 18:15–20:30, Poster B

Growth and electronic structure characterization of FeSe_xTe_1−x thin films on a topological insulator — •Thiago R. F. Peixoto¹, Simon Müller¹, Sujit Manna², Jagadeesh Moodera², and Friedrich Reinert¹ — ¹Experimental Physics VII and Röntgen Center for Complex Materials, Universität Würzburg — ²Department of Physics, Massachussets Institute of Technology, Boston, USA

The realization of a topological superconductor state at the interface between a strong three-dimensional topological insulator (3D-TI) and an s-wave superconductor is one of the central issues in condensed matter physics nowadays [1]. In iron-based superconductors, the presence of magnetic species may yet break the time-reversal symmetry of the TI non-trivial electronic structure, allowing the existence of chiral Majorana fermions [1]. Here we report the successful growth of high quality FeSe_xTe_1−x films on 3D-TI (Bi,Sb)Se_xTe_3−x substrates by means of molecular beam epitaxy. Low-energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) experiments confirm the formation of 1-2 unit cells Fe(Se,Te) film with a high surface quality. Angle-resolved photoemission spectroscopy (ARPES) has been performed at temperatures between 1 K and 20 K, at photon energies between 20 eV and 150 eV, and for both linear polarizations, showing typical signatures of the FeSeTe valence band structure along the surface high symmetry directions. Our data is discussed in comparison with well-established ARPES results and band structure calculations.

[1] L. Fu and C. L. Kane, Phys. Rev. Lett. 100, 096407 (2008).