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O: Fachverband Oberflächenphysik
O 52: Poster: Electronic structure: Surface Magnetism and Spin Phenomena
O 52.1: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster B
Field and temperature dependent switching analysis of holmium single atom magnets — Fabian Donat Natterer1, Fabio Donati1,2,3, •Patrick Forrester1, François Patthey1, and Harald Brune1 — 1Institute of Physics, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland — 2Center for Quantum Nanoscience, Institute for Basic Science, Seoul, Korea — 3Department of Physics, Ewha Womans University, Seoul, Korea
As stable magnetic bits have shrunk to the fundamental limit of single atoms, questions about the thermal stability of magnetic information become pressing. Using the example of holmium single atom magnets on MgO, we investigate the magnetic bistability and switching between 4.3 K and up to 50 K. A coercive field of more than 8 T is found at 35 K. We encounter spontaneous magnetization reversal at about 45 K and 8 T in our STM study. We estimate the transverse magnetic anisotropy energy from a magnetic field and bias voltage dependent 2-state switching analysis at 4.3 K. This allows us to constrain the possible magnetic ground state to either Jz=8 or Jz=7, both explaining magnetic bistability at finite field strengths.