Berlin 2018 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 61: Focus Session: Nanoscale Insights into Interfacial Electrochemistry I

O 61.4: Vortrag

Mittwoch, 14. März 2018, 11:45–12:00, HE 101

Influence of near surface defects of GaAs on the electrolyte structure in KOH solutions — •Alrik Stegmaier and Hans Hofsäss — 2. Physikalisches Institut, Georg-August Universität Göttingen

The electrolyte-semiconductor interface is a very active area of research. While the electrolyte structure at ideal, defect-free semiconductor surfaces is relatively well understood, the influence of surface near defects, applied potential differences and strong electrolytes, as found in many applications, is much more difficult to understand.

Here we present our latest results of our investigation of the structure of the electrolyte for defects near the <100>-GaAs - KOH/water interface at large pH values. For this classical and ab initio molecular dynamics simulations are combined with continuum models and impedance measurements for proton irradiated GaAs.