Berlin 2018 – scientific programme
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O: Fachverband Oberflächenphysik
O 77: Poster: Plasmonics and Nanooptics
O 77.17: Poster
Wednesday, March 14, 2018, 18:15–20:30, Poster A
Light trapping and localization in a-Si:H absorber layers with tailored nanotextures — Martin Aeschlimann1, Felix Becker2, Tobias Brixner3, •Benjamin Frisch1, Michael Hartelt1, Matthias Hensen3, Thomas H Loeber4, Walter Pfeiffer2, Sebastian Pres3, Bernd Stannowski5, and Helmut Stiebig2 — 1Fachbereich Physik and Research Center OPTIMAS, TU Kaiserslautern, Erwin-Schrödinger-Str. 46, 67663 Kaiserslautern — 2Fakultät für Physik, Universität Bielefeld, Universitätsstr. 25, 33615 Bielefeld — 3Institut für Physikalische und Theoretische Chemie, Universität Würzburg, Am Hubland, 97074 Würzburg — 4Nano-Structuring-Center, Erwin-Schrödinger-Str. 13, 67663 Kaiserslautern — 5Helmholtz-Zentrum Berlin, PVcomB, Schwarzschildstr. 3, 12489 Berlin
The enhanced absorbtion for near-IR wavelengths in hydrogenated amorphous silicon (a-Si:H) thin films deposited on a nanotextured zinc oxide (ZnO) surface has been attributed to thermionic emission caused by Anderson localization of light [1]. FDTD simulations reveal that light localization only occurs for distinct spatial frequency ranges of surface roughness. Here a focused ion beam based fabrication technique is applied to tailor the ZnO towards a disordered system with enhanced absorption. The actual light trapping and absorption is investigated using time- and energy-resolved electron emission microscopy. We observe localized modes and high nonlinearities supporting the theory of thermionic emission after excitation with fs-pulses of 800 nm wavelength. [1] Nature Photonics 9, 663-668 (2015)