Berlin 2018 – scientific programme
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O: Fachverband Oberflächenphysik
O 89: Oxide and Insulator Surfaces: Structure, Epitaxy and Growth I
O 89.3: Talk
Thursday, March 15, 2018, 11:00–11:15, MA 041
Pulsed laser deposition of In2O3 thin films on YSZ(111) — •Michele Riva1, Giada Franceschi1, Jakob Hofinger1, Margareta Wagner1, 2, and Ulrike Diebold1 — 1IAP, TU Wien — 2FAU Erlangen-Nürnberg
In2O3 is a wide band-gap, transparent conductive oxide whose applications include optoelectronics, gas sensing, and catalytic fuel production. In all these applications In2O3 surfaces and their nanoscale properties play a key role, and atomic-scale investigations to unravel such properties require suitable single-crystalline model systems. However, In2O3 single crystals are not commercially available, and synthetically grown ones are usually very small. While this is not critical for scanning probe techniques, area-averaging techniques such as TPD and XPS require larger samples. To this purpose, we have grown well-ordered and atomically flat In2O3(111) thin films - with a thickness of a few hundred nanometers - onto YSZ(111) substrates by PLD. Their structure, chemical composition and morphology were characterized by RHEED, LEED, XRD, XPS, AFM, and STM. By optimizing the growth parameters, we could obtain In2O3(111) films exhibiting properties comparable to the best single crystals available, exhibiting atomically-flat terraces a few hundred nanometers wide, separated by monoatomic steps. The films behave like In2O3 single crystals, down to the atomic scale, and thus allow the combination of atomic-scale surface-science analysis and the investigation of, e.g., the electronic structure and the reactivity of their surfaces via area averaging spectroscopic techniques.