Berlin 2018 – scientific programme
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O: Fachverband Oberflächenphysik
O 90: Electronic structure of surfaces: Spectroscopy, surface states IV
O 90.7: Talk
Thursday, March 15, 2018, 12:00–12:15, MA 042
Electronic structure of the non-polar GaN(10 10) surface — Martin Franz1, Stephan Appelfeller1, Holger Eisele1, Philipp Ebert2, and •Mario Dähne1 — 1Institut für Festkörperphysik, Technische Universität Berlin — 2Peter Grünberg Institut, Forschungszentrum Jülich
The non-polar GaN(10 10) surface, the so-called m-plane, plays an important role in nitride devices, e.g. as the predominant sidewall facet of nanowires or as a promising growth substrate for a reduction of polarization fields. However, detailed experimental results on the nature of the GaN(10 10) surface states are still scarce.
In this work, the electronic structure of the n-GaN(10 10) cleavage surface was studied using angle-resolved photoelectron spectroscopy at BESSY. The bulk valence bands and the filled nitrogen-related surface-state band could be clearly identified, allowing to determine the dispersion of the surface-state band and to derive the effective masses for both the bulk and surface valence bands. In addition, the position of the Fermi level within the band gap was determined at around 2.3 eV above the valence-band maximum, corresponding to the energetic position of the minimum of the empty gallium-related surface-state band, in nice agreement with recent theoretical results [1].
This work was supported by the DFG, Sfb 787, TP A4.
[1] L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.-P. Nys, B. Grandidier, D. Stiévenard, R.E. Dunin-Borkowski, J. Neugebauer, and P. Ebert, Appl. Phys. Lett. 103, 152101 (2013).