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O: Fachverband Oberflächenphysik

O 91: 2D materials beyond graphene: TMDCs, silicene and relatives III

O 91.9: Vortrag

Donnerstag, 15. März 2018, 12:30–12:45, MA 043

Synthesis of large area and high-quality MoS₂ monolayers with single domain orientation on Au(111) — Harsh Bana¹, Elisabetta Travaglia¹, •Luca Bignardi², Paolo Lacovig², Charlotte E. Sanders³, Maciej Dendzik³, Matteo Michiardi³, Marco Bianchi³, Daniel Lizzit², Francesco Presel¹, Dario De Angelis¹, Nicoleta Apostol⁴, Pranab Kumar Das^5,6, Jun Fujii⁶, Ivana Vobornik⁶, Rosanna Larciprete⁷, Alessandro Baraldi^1,2,6, Philip Hofmann³, and Silvano Lizzit² — ¹University of Trieste, Trieste, Italy — ²Elettra Sincrotrone Trieste, Trieste, Italy — ³University of Aarhus, Aarhus, Denmark — ⁴Nat. Inst. Material Physics, Magurele, Romania — ⁵Int. Center Theor. Physics, Trieste, Italy — ⁶Ist. Officina Materiali-CNR, Trieste, Italy — ⁷Ist. Sistemi Complessi-CNR, Rome, Italy

The implementation of MoS₂-based devices exploiting the valley-spin degree of freedom relies on the presence of singly-oriented crystalline domains in the layer, which is not secured by current growth methods. We present a protocol for the synthesis through physical vapor deposition of single-layer (SL) MoS₂ with a single orientation on Au(111) and we characterize the layer with a combination of surface science techniques. Photoelectron diffraction (XPD) proved the single orientation character of the layer, while STM and angular resolved photoemission (ARPES) confirmed the high structural quality. The single domain orientation allowed the measurement, through spin-resolved ARPES, of the complete spin polarization with spin reversal of the states near K and -K points.