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O: Fachverband Oberflächenphysik

O 92: Nanostructures at surfaces: Dots, particles, clusters I

O 92.2: Vortrag

Donnerstag, 15. März 2018, 11:00–11:15, MA 141

Thin films of hydrogen-terminated silicon nanoparticles on functionalized surfaces — •Domenikos Chryssikos¹, Markus Wiesinger¹, Martin Stutzmann¹, Anna Cattani-Scholz¹, and Rui N. Pereira^1,2 — ¹Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching bei München, Germany — ²Department of Physics and Institute for Nanostructures, Nanomodelling and Nanofabrication, University of Aveiro, 3810-193 Aveiro, Portugal

Electronic devices incorporating thin films of solution-processed crystalline nanoparticles (NPs) of semiconductor materials have been studied intensively in recent years as an alternative to bulk materials. Silicon is advantageous for use in the form of NPs, thanks to its abundance and non-toxicity. However, thin films of silicon NPs (SiNPs) with H-termination, required for efficient charge transport, are difficult to achieve due to NP agglomeration in solution. In this work, we explore the assembling of thin films of H-terminated SiNPs bound to silicon dioxide surfaces functionalized with a monolayer of decyldiphosphonic acid molecules. We expect this method to provide a stable and patternable immobilization of very thin layers of SiNPs. Deposition of SiNPs can be realized via substrate immersion in SiNP colloid, followed by annealing at 140^∘C. By comparison with control samples, our results indicate the requirement of substrate functionalization and annealing for a stable, sonication-resistant attachment of SiNPs to the substrates. Further, the electrical properties of the obtained SiNP networks are studied by means of bottom-gate field-effect transistors.