Berlin 2018 – wissenschaftliches Programm
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SYVC: Symposium Voltage Control of Functional Interfaces: Magneto-ionic Meet Memristive Systems
SYVC 1: SYVC: Voltage Control of Functional Interfaces – Magneto-ionic Meet Memristive Systems
SYVC 1.3: Hauptvortrag
Mittwoch, 14. März 2018, 16:00–16:30, H 0105
Microscopic Mechanisms of Memristive Switching in Metal Oxides — •Rainer Waser1,2, Stephan Menzel2, and Regina Dittmann2 — 1IWE2 & JARA, RWTH Aachen, Aachen, Germany — 2PGI-7, FZ Jülich, Germany
Redox-based memristive switching devices (ReRAM), also called nanoionic memories, are widely considered as energy-efficient approaches to non-volatile memories and neuromorphic concepts. In this talk, the ultra-high non-linearity of the switching kinetics of redox-based resistive switching devices will be discussed with an emphasis on the so-called valence change mechanism (VCM) typically encountered as a bipolar switching in metal oxides. The involved electrochemical and physical processes can be either electric field/voltage enhanced or accelerated by a local increase in temperature due to Joule heating. The analysis of the published SET switching kinetics data of VCM-type ReRAM systems showed that their nonlinearity is mainly dominated by temperature-accelerated ion hopping, controlled by the local power during the switching process. The gradual RESET transition can be explained in terms of temperature-accelerated ion movement with counter-acting ion drift and diffusion processes. It will be shown that a designated combination of oxides can significantly improve the long-term kinetics, i.e. the retention time, by tailoring the ion diffusion properties in the oxide layers. The relevance of these aspects for neuromorphic applications will be worked out.