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TT: Fachverband Tiefe Temperaturen

TT 10: Heusler Compounds, Semimetals and Oxides (joint session MA/TT)

TT 10.4: Vortrag

Montag, 12. März 2018, 10:15–10:30, EB 301

high throughput screening for 3D spin gapless semiconductors in Heusler compounds — •qiang gao, ingo ophale, and hongbin zhang — Institute of Materials Science, TU Darmstadt, Darmstadt, Germany

In recent years, spin-gapless semiconductors (SGSs) have drawn intensive attention to the spintronics community. SGSs are half metals with the valence band maximum and conduction band minimum touching each other directly or indirectly (1). In this work, we performed high throughput screening for novel three-dimensional SGSs in quaternary Heusler compounds. Following the empirical rule, we focused on compounds with 18, 21 or 26 valence electrons (2). We have found many new Heusler compounds as candidate SGSs, with both direct and indirect touching. In particular, it is observed that spin-orbit coupling can also drive some systems into the SGS phase, resulting in possible interesting applications for future spintronic devices. (1) X.L. Wang, Phys. Rev. Lett., 100, 156404 (2008). (2) X.T. Wang, Z.X. Cheng, J.L. Wang, X.L. Wang, G.D. Liu, J. Mater. Chem. C, 4, 7176-7192 (2016).