Berlin 2018 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 11: Ferroelectric Domain Walls I (joint session KFM/TT)

TT 11.1: Invited Talk

Monday, March 12, 2018, 09:30–10:00, EMH 225

Atomic-resolution imaging of electronic inversion layers at ferroelectric domain walls — Julia Mundy¹, •J. Schaab², Y. Kumagai², A. Cano³, M. Stengel^4,5, I. Kung⁶, D. Gottlob⁷, H. Doganay⁷, M. Holtz⁸, R. Held⁸, Z. Yan^2,9, E. Bourret⁹, C. Schneider⁷, D. Schlom⁸, D. Muller⁸, R. Ramesh^9,10, N. Spaldin², and D. Meier^2,11 — ¹Harvard University — ²ETH Zurich — ³Université de Bordeaux, ICMCB — ⁴ICREA Institució Catalana de Recerca i Estudis Avançat — ⁵Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB — ⁶TU Berlin — ⁷Forschungszentrum Julich — ⁸Cornell University — ⁹Lawrence Berkeley National Laboratory — ¹⁰UC Berkeley — ¹¹Norwegian University of Science and Technology

Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. Here we use atomic-resolution STEM-EELS to directly probe the charge transfer at these charged ferroelectric domain walls in ErMnO₃. Our direct quantification of the charge transfer to the domain boundary gives insight into the the formation and eventual activation of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics.