Berlin 2018 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 11: Ferroelectric Domain Walls I (joint session KFM/TT)
TT 11.6: Vortrag
Montag, 12. März 2018, 11:15–11:30, EMH 225
Domain Walls in Oxide Thin Films for Resistive Switching — Wilson Acevedo2, •Mart Salverda1, Diego Rubi2, Saeedeh Farokhipoor1, and Beatriz Noheda1 — 1Zernike Institute for Advanced Materials, Groningen, The Netherlands — 2CNEA and INN, Buenos Aires, Argentina
Ferroelastic domain walls in thin films of some complex oxides show a higher conductivity than the domains [1][2]. This effect is proposed to originate from the accumulation of ionic species at the domain walls due to the presence of strain gradients [2][3][4]. In a recent study [5] we propose a model that accounts for the electrical behavior measured in TbMnO3 thin films using macroscopic techniques, by assuming that the structural domain walls that are present in these films [6] are conducting. From the model, the value of the sheet resistance of the domain walls has been extracted. To further investigate the validity of this approach for other materials, we perform a similar analysis on systems incorporating thin films of BiFeO3 where the domain walls are already proven to be conducting. Our aim is to elucidate the intrinsic transport properties of the domain walls.
[1] J. Seidel et al., Nature Materials 8, 229 (2009)
[2] S. Farokhipoor and B. Noheda, Physical Review Letters 107, 127604 (2011)
[3] E. Salje and H. Zhang, Phase Transitions 82, 452 (2009)
[4] T. Rojac et al., Nature Materials 16, 322 (2017)
[5] W. Román et al. (in preparation)
[6] S. Farokhipoor et al., Nature 515, 379 (2014)