Berlin 2018 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 11: Ferroelectric Domain Walls I (joint session KFM/TT)
TT 11.9: Talk
Monday, March 12, 2018, 12:15–12:30, EMH 225
Electrical half-wave rectification at improper ferroelectric domain walls — •J. Schaab1, S. H. Skjaervo2, S. Krohns3, X. Dai1, M. Holtz4, M. Lilienblum1, D. A. Muller4,5, M. Fiebig1, S. M. Selbach2, and D. Meier1,2 — 1ETH Zürich — 2NTNU Trondheim — 3University of Augsburg — 4Cornell University — 5Kavli Institute at Cornell for Nanoscale Science
Ferroelectric domain walls represent multifunctional 2D-elements that offer great potential for novel device paradigms. Improper ferroelectrics display particularly promising domain walls, which due to their unique robustness, are the ideal template for imposing the desired electronic behavior. Chemical doping, for instance, induces p- or n-type characteristics and electric fields reversibly switch between resistive and conductive domain-wall states.
Here, we demonstrate conversion of alternating current (AC) into direct current (DC) output based on neutral 180∘ domain walls in improper ferroelectric ErMnO3. By combining scanning probe and dielectric spectroscopy, we show that the AC-to-DC conversion occurs for frequencies at which the domain walls are pegged to their equilibrium position. The practical frequency regime and magnitude of the output is controlled by the conductivity of the surrounding domains. Using density functional theory, we attribute the distinct transport behavior to oxygen defects that accumulate at the neutral walls. Our study reveals domain walls acting as 2D half-wave rectifiers, extending domain-wall-based nanoelectronics applications into the realm of AC-technology.