Berlin 2018 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 20: Topological Semimetals II

TT 20.5: Vortrag

Montag, 12. März 2018, 16:00–16:15, A 053

Planar Hall effect in half Heusler Weyl semimetal GdPtBi — Nitesh Kumar, Claudia Felser, and •Chandra Shekhar — Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany

Weyl and Dirac Fermions semimetals exhibits exotic transport properties for example high carrier mobility, large positive transverse magnetoresistance, low charge carrier density, low effective mass etc. However, among the very few available tools to characterize Weyl semimetals through electrical transport, negative magnetoresistance is most commonly used. Considering shortcomings of this method, new tools to characterize chiral anomaly in Weyl semimetals are desirable. We employ planar Hall effect as an effective technique in half Heusler Weyl semimetal GdPtBi to study chiral anomaly. This compound exhibits a large value of 1.5 mΩcm planar Hall resistivity at 2 K and in 9 T [1]. Our analysis reveals that the observed amplitude is dominated by Berry curvature and chiral anomaly contributions. Through the angle dependent transport studies we establish that GdPtBi with relatively small orbital magnetoresistance is an ideal candidate to observe large planar Hall effect.
N. Kumar, C. Felser and C. Shekhar, arXiv:1711.04133, 2017.