Berlin 2018 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 23: Graphene: Adsorption, Intercalation and Doping I (joint session O/TT)
TT 23.2: Vortrag
Montag, 12. März 2018, 15:15–15:30, MA 043
Modification of the graphene/SiC(0001) interface by intercalation of antimony — •Susanne Wolff1, Florian Speck1, Martina Wanke1, Felix Timmermann2, Manfred Albrecht2, and Thomas Seyller1 — 1Professur für Technische Physik, TU Chemnitz, Reichenhainer Str. 70, D-09126 Chemnitz, Germany — 2Lehrstuhl für Experimentalphysik IV, Universität Augsburg, Universitätsstr. 1 Nord, D-86159 Augsburg, Germany
Sublimation growth of graphene on SiC(0001) in argon atmosphere is a well-established method for the preparation of graphene. The first grown carbon layer is partially covalently bound to the Si atoms of the substrate. This so-called buffer layer lacks the electronic properties of graphene. A decoupling of the buffer layer from the SiC substrate can be achieved by intercalation, resulting in quasi-freestanding graphene, with electronic properties tuned by the choice of the intercalant.
We use x-ray photoelectron spectroscopy and angle-resolved photoelectron spectroscopy to investigate the intercalation of antimony. Antimony was deposited on the buffer layer by molecular beam epitaxy. Subsequent annealing in argon at atmospheric pressure results in an intercalation of metallic and oxidized antimony. A pre-intercalation annealing in argon enables an intercalation of metallic antimony only, resulting in a moderate n-type doping of the quasi-freestanding graphene.