Berlin 2018 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 23: Graphene: Adsorption, Intercalation and Doping I (joint session O/TT)

TT 23.4: Talk

Monday, March 12, 2018, 15:45–16:00, MA 043

Photoemission study of the intercalation of transition metals underneath graphene on silicon carbide — •Richard Hönig, Philipp Espeter, Peter Roese, Karim Shamout, Ulf Berges, and Carsten Westphal — Experimentelle Physik I, TU Dortmund, Otto-Hahn-Strasse 4a, 44227 Dortmund, Germany

Silicon carbide (SiC) is among the most promising substrates on the route to real-life graphene (G) applications. While the basic properties of G/SiC were well elucidated during the past decade, present research is focused on G/SiC as a building block of multilayer systems. In our study we analyze the interaction of G/SiC with magnetic transition metals in order to explore the potential for spintronic applications. Here, cobalt and nickel are most interesting due to a well-matched lattice constant.

The 6H-SiC(0001) samples are prepared by annealing in argon gas at atmospheric pressure leading to large-area growth. Then the sample is covered with thin transition metal films with thicknesses up to a few nanometers. Our main characterization methods are threshold photoemission electron microscopy (PEEM) and synchrotron based photoelectron spectroscopy (PES).

We performed a film thickness and temperature dependent study for Co on G/SiC and will present series of PEEM images acquired during in-situ sample annealing. Furthermore, on the basis of PES spectra we discuss the electronic structure of our sample system. Finally, we are looking forward to present first PEEM images of this sample system acquired with circularly polarized soft x-rays.