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TT: Fachverband Tiefe Temperaturen
TT 43: Graphene: Electronic Properties, Structure and Substrate Interaction II (joint session O/TT)
TT 43.10: Talk
Tuesday, March 13, 2018, 13:00–13:15, MA 043
Extremely flat band in bilayer graphene on silicon carbide — •Dmitry Marchenko1, Daniil Evtushinsky1, Vagelis Golias1, Andrei Varykhalov1, Thomas Seyller2, and Oliver Rader1 — 1Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH — 2Technische Universitat Chemnitz
In the present work we discover by angle-resolved photoemission an extremely flat band forming a strong 2D-extended van Hove singularity near the K point in bilayer graphene on SiC. We present a novel model for flat band formation in bilayer graphene and other bipartite lattices. Our finding implies that we can expect strong propensity towards a superconducting transition with high critical temperature.