Berlin 2018 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 46: Poster Session: Graphene (joint session O/TT)

TT 46.1: Poster

Tuesday, March 13, 2018, 18:15–20:30, Poster A

The effects of defects and disorder on the electronic structure of graphene — •Piotr Kot¹, Jonathan Parnell², Sina Habibian², Pavel Ostrovsky¹, and Christian Ast¹ — ¹Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany — ²University of British Columbia, Vancouver, Canada

We use a real-space nearest neighbor tight-binding model to study the effect of defects on the band dispersion of graphene. We find that defects in graphene either generally preserve the canonical band structure, or disrupt it by separating the two cones creating an ``elongated'' Dirac point. This second structure greatly resembles the band dispersion of experimentally measured epitaxial graphene. By using a self-consistent T-matrix approximation we find the reason why defects create two distinctly different band structures, by showing that point defects are either resonant or non-resonant in graphene. Adding all these pieces together, we conclude on the cause of ``elongation'' in epitaxial graphene and the nature of the electronic structure in the ``elongated'' region finding that this region can not be considered a gap.