Berlin 2018 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 46: Poster Session: Graphene (joint session O/TT)
TT 46.2: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster A
Spin and charge transport in quasi-freestanding epitaxial graphene grown by CVD — •Jantje Schommartz1,2, Alexey Kaverzin2, Christoph Tegenkamp1, and Bart J. van Wees2 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, Deutschland — 2Physics of Nanodevices, University of Groningen, Netherlands
A promising route for the synthesis of homogeneous large-area graphene, suitable for standard device fabrication techniques, is the epitaxial growth of graphene on SiC. In the present work the growth is achieved by chemical vapor deposition (CVD) by using a hydrocarbon precursor for the carbon deposition on the Si-face of the SiC wafer. We study the quasi-freestanding epitaxial CVD graphene (CVD- QFEG) grown on 6H-SiC(0001) by contacting it with ferromagnetic Cobalt electrodes made by electron-beam lithography technique. By standard lock-in techniques we address the charge and spin transport properties independently by local and non-local measurement geometries. To the best of our knowledge, we detect for the first time spin signatures in transport measurements on CVD-QFEG. This study shows that the CVD-QFEG reveals striking differences in spin and charge transport properties compared to CVD epitaxial graphene. We attribute this to the influence of localized states arising from the buffer layer consistent with the measurements performed on epitaxial graphene grown by sublimation.