Berlin 2018 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 50: Quantum-Critical Phenomena I
TT 50.11: Vortrag
Mittwoch, 14. März 2018, 12:30–12:45, H 3005
High-pressure fermiology of the metallised Mott insulator NiS2 — •Jordan Baglo1, Konstantin Semeniuk1, Hui Chang1, Xiaoye Chen1, Pascal Reiss1, HongEn Tan1, Patricia Alireza1, Audrey Grockowiak2, William Coniglio2, Stanley Tozer2, Alix McCollam3, Inge Leermakers3, Sven Friedemann4, Monika Gamza5, and Malte Grosche1 — 1Cavendish Laboratory, University of Cambridge, UK — 2NHMFL, Tallahassee, Florida, USA — 3HFML, Nijmegen, The Netherlands — 4HH Wills Laboratory, University of Bristol, UK — 5Jeremiah Horrocks Institute, University of Central Lancashire, UK
The Mott metal-to-insulator transition continues to be an active topic of investigation; various mechanisms have been proposed, but the precise nature of the transition remains an open question. In many such systems under study, filling (via chemical doping) is used as a tuning parameter, but the resultant disorder hinders the use of sensitive quantum oscillation techniques to study Fermi surface properties. In the prototypical Mott insulator NiS2, one can instead use pressure to cleanly tune the ratio U/t of onsite Coulomb repulsion to kinetic energy. We will present our most recent quantum oscillation measurements of NiS2 under hydrostatic pressures from near the Mott transition at ∼30 kbar up to 115 kbar. We find that the Fermi surface remains nearly unchanged on approaching Mott localisation, whereas the effective mass is strongly renormalised – in qualitative agreement with the Brinkman-Rice picture.