Berlin 2018 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 55: Multiferroic Oxide Thin Films and Heterostructures I (joint session KFM/TT/MA)

TT 55.1: Invited Talk

Wednesday, March 14, 2018, 09:30–10:00, EMH 225

Oxygen vacancy controlled functionalities at interfaces of multiferroic tunnel junctions. — •Jacobo Santamaria — GFMC. Universidad Complutense 28040 Madrid

Oxygen vacancies are the most common defect in oxide perovskite oxides. Important applications are associated to their controlled generation and transport in electrochemical energy (fuel cells and batteries) and memory (memristors) devices. At interfaces oxygen vacancies can accumulate under the action of external electric fields and, especially in nanostructures be the source of novel, yet unreported, functionalities. Here we demonstrate the dynamic control of the vacancy profile in the nanometer thick barrier of a ferroelectric tunnel junction. Oxygen vacancies generated at an electrochemically active electrode accumulate towards the asymmetric interfaces of a ferroelectric tunnel barrier under the action of an external electric field and their ensuing doping effect modify the stability of ferroelectric polarization. I will further show that oxygen vacancies in a ferroelectric tunnel barrier may stabilize unexpected domain structures which control the tunneling transport providing a major step forward towards the new concept *The Wall is the Device* , to exploit the electronic properties of domain walls for ferroelectric tunnel barriers with new functionalities.